Switching characteristics of SRO-MISS devices

Burhanuddin Yeop Majfis, and M. J. Morant, (1991) Switching characteristics of SRO-MISS devices. Jurnal Kejuruteraan, 3 . pp. 47-56.

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The switching characteristics of the Metal-Insulator-Semiconductor-Switch (MISS) device with Silicon-Rich-Oxide (SRO) as the semi-insulating material have been studied at room temperature. The SRO films were deposited by atmospheric pressure chemical vapour deposition (APCvD) at 650°C with SiH4 and N20 reactant gases and N2 carrier. The reactant gas phase ratio, R, varies from 0.09 to 0.25 and the deposition time from 0.6 to 2 minutes

Item Type:Article
Journal:Jurnal Kejuruteraan
ID Code:1293
Deposited By: Ms. Nor Ilya Othman
Deposited On:16 May 2011 04:21
Last Modified:11 Oct 2011 03:45

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