Zahari Mohamed Darus, and Iftekhar Ahmed, (1992) Distribution of ga vacancies in Zn diffused GaAs. Jurnal Kejuruteraan, 4 .
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Abstract
A detailed discussion on the distribution and the characteristics of vacancy profiles in Zn diffused GaAs is presented in this paper. Vacancies are consumed during the diffusion process, creating short-fall in the equilibrium vacancy concentration. The crystal tries to recover this short-fall by vacancy diffusion and vacancy generation process. In course of time, the depth in the vacancy short-fall decreases, but this short-fall propagates deeper into the crystal
| Item Type: | Article |
|---|---|
| Journal: | Jurnal Kejuruteraan |
| ID Code: | 1300 |
| Deposited By: | Ms. Nor Ilya Othman |
| Deposited On: | 16 May 2011 04:49 |
| Last Modified: | 11 Oct 2011 03:45 |
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