Distribution of ga vacancies in Zn diffused GaAs

Zahari Mohamed Darus, and Iftekhar Ahmed, (1992) Distribution of ga vacancies in Zn diffused GaAs. Jurnal Kejuruteraan, 4 .

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Abstract

A detailed discussion on the distribution and the characteristics of vacancy profiles in Zn diffused GaAs is presented in this paper. Vacancies are consumed during the diffusion process, creating short-fall in the equilibrium vacancy concentration. The crystal tries to recover this short-fall by vacancy diffusion and vacancy generation process. In course of time, the depth in the vacancy short-fall decreases, but this short-fall propagates deeper into the crystal

Item Type:Article
Journal:Jurnal Kejuruteraan
ID Code:1300
Deposited By: Ms. Nor Ilya Othman
Deposited On:16 May 2011 04:49
Last Modified:11 Oct 2011 03:45

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