Investigating the impact of growth temperature on WS2 thin film

Md Khan Sobayel Rafiq, and Afida Ayob, and Badariah Bais, and Md Akhtaruzzaman, and Nowshad Amin, (2020) Investigating the impact of growth temperature on WS2 thin film. Jurnal Kejuruteraan, 3 (1(SI)). pp. 23-28. ISSN 0128-0198


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Radio-frequency (RF) Magnetron Sputtering was used to deposit thin tungsten di sulfide (WS2 ) films on top of soda lime glass substrates. Deposition temperature of RF magnetron sputtering was varied from room temperature (RT) to 200o C with 50o C interval to investigate the impact on film characteristics as well as to optimize for suitable application in thin film solar cells. Structural and opto-electronic properties of as-grown films were investigated and analyzed for different growth temperatures. All the WS2 films exhibit granular structure consist of rhombohedral phase with a strong preferential orientation towards (101) crystal plane. Optical bandgaps are ranged from 1.73 eV to 2.3 eV for different growth temperatures. As-grown films show higher carrier concentration with n-type conductivity. Polycrystalline ultra-thin WS2 film with bandgap of 2.4 eV, carrier concentration of 2.28 X 1017 cm-3 and resistivity of 1.52 Ω-cm were successfully achieved at 50o C with 50 W RF power that can be employed as window layers in thin film solar cells.

Item Type:Article
Keywords:Thin film; Magnetron sputtering; Photovoltaic; Tungsten di sulphide; Growth temperature
Journal:Jurnal Kejuruteraan
ID Code:17356
Deposited By: ms aida -
Deposited On:18 Aug 2021 06:27
Last Modified:23 Aug 2021 02:21

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