Hossein Mohammadi, and Huda Abdullah, and Chang, Fu Dee (2014) A Review on modeling the channel potential in multi-gate MOSFETs. Sains Malaysiana, 43 (6). pp. 861-866. ISSN 0126-6039
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Abstract
This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly.
| Item Type: | Article |
|---|---|
| Keywords: | Multi-gate SOI MOSFETs; natural channel length; potential distribution; short channel effects |
| Journal: | Sains Malaysiana |
| ID Code: | 7174 |
| Deposited By: | ms aida - |
| Deposited On: | 19 Jun 2014 12:16 |
| Last Modified: | 14 Dec 2016 06:43 |
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