A Review on modeling the channel potential in multi-gate MOSFETs

Hossein Mohammadi, and Huda Abdullah, and Chang, Fu Dee (2014) A Review on modeling the channel potential in multi-gate MOSFETs. Sains Malaysiana, 43 (6). pp. 861-866. ISSN 0126-6039


Official URL: http://www.ukm.my/jsm/


This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly.

Item Type:Article
Keywords:Multi-gate SOI MOSFETs; natural channel length; potential distribution; short channel effects
Journal:Sains Malaysiana
ID Code:7174
Deposited By: ms aida -
Deposited On:19 Jun 2014 12:16
Last Modified:14 Dec 2016 06:43

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